850nm
850nm 5mW VCSEL Bare Die
850nm 5mW VCSEL bare die with 6mW typical output, 7mA QCW operation and a 170 × 170μm single-emitter die for sensing and OEM custom packaging projects.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 850nm typ.; 840–860nm
- Optical Output Power
- 5mW typ. / 6mW max.
- Emitter Configuration
- Single Emitter
- Operating Mode
- Pulse operation
- Die Size
- 170 ±10μm × 170 ±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 850nm 5mW VCSEL Bare Die for Low-Power NIR Source Development
The 850nm 5mW VCSEL Bare Die is a compact single-emitter near-infrared VCSEL chip designed for low-power sensing, optical-source evaluation, semiconductor packaging and custom optical-module development.
At a forward current of 7mA, a temperature of 25°C, a pulse width of 0.5ms and a 1% duty cycle, the device provides 5mW minimum and 6mW typical optical output power.
The device provides a typical peak wavelength of 850nm within a wavelength range of 840–860nm. Its single-emitter structure and 170 × 170μm-class die footprint support compact package layouts and low-current near-infrared optical-source designs.
The product is supplied as an unpackaged semiconductor bare die. It requires appropriate die attachment, wire bonding, package protection, thermal-path design and optical integration before use in a finished product or optical module.
Development directions include:
- Low-power near-infrared sensing
- Proximity and presence detection
- Compact optical-source evaluation
- Consumer-electronics optical sensing
- Machine-vision source evaluation
- Optical alignment and beam evaluation
- Ceramic-submount integration
- Custom SMD and TO-can packaging
- Engineering and research prototypes
2. Optical and Electrical Characteristics
The principal optical and electrical characteristics of the 850nm 5mW VCSEL Bare Die are shown below.
Parameter | Minimum | Typical | Maximum | Test Condition |
|---|---|---|---|---|
Peak Wavelength | 840nm | 850nm | 860nm | — |
Optical Output Power | 5mW | 6mW | — | IF = 7mA, 25°C, QCW |
Threshold Current | 0.7mA | 1.3mA | 2.0mA | — |
Forward Voltage | 1.8V | 2.0V | 2.2V | IF = 7mA |
Beam Divergence, 1/e² | 17° | 20° | 23° | IF = 7mA |
Slope Efficiency | 0.9W/A | 1.0W/A | — | — |
Differential Resistance | — | 75Ω | — | — |
Power Conversion Efficiency | 39% | 41% | — | IF = 7mA |
The optical-output and beam-divergence values are specified under QCW conditions with a 0.5ms pulse width and 1% duty cycle at 25°C.
This product should not be interpreted as a continuous-wave device. Performance in the final package will also depend on drive current, pulse width, duty cycle, die-attach quality, wire-bonding process, thermal path and external optical structure.
Beam divergence is specified using the 1/e² definition and should not be directly replaced by an FWHM or D86 value.
The values above are representative parameters from the corresponding product specification. Final product selection and integration should be confirmed using the complete datasheet.
3. Bare Die Structure and Packaging Integration
The 850nm 5mW VCSEL uses a compact single-emitter bare-die structure for semiconductor packaging and optical-module integration.
The main mechanical characteristics include:
Mechanical Parameter | Specification |
|---|---|
Die Size | 170 ±10μm × 170 ±10μm |
Die Thickness | 130 ±10μm |
Number of Emitters | 1 |
Anode Pad Size | 90 ±5μm |
Backside Cathode Area | 170 ±10μm × 170 ±10μm |
The top-side anode pad and backside cathode configuration support conventional die attachment and gold-wire bonding processes.
Possible packaging directions include:
- Ceramic-submount assembly
- Chip-on-board integration
- Custom SMD packages
- TO-can packages
- Ceramic laser packages
- Compact sensor-source modules
- Lens-integrated optical sources
- Application-specific NIR packages
The die-attach material, bonding process, package dimensions, electrode orientation and thermal structure should be confirmed according to the customer’s production process.
The device is ESD-sensitive. Appropriate electrostatic protection should be used during storage, handling, die placement, wire bonding, testing and package assembly.
For projects requiring alternative optical-output levels or multi-emitter array structures, view the 850nm VCSEL Bare Die Series.
4. Application Development
The 850nm 5mW VCSEL Bare Die is primarily intended for low-power near-infrared source projects requiring a compact die footprint, low operating current and flexible package integration.
Application directions include:
- Near-infrared sensing
- Proximity sensing
- Presence detection
- Consumer-electronics optical sensing
- Machine-vision source evaluation
- Industrial optical detection
- Optical alignment
- Beam-profile evaluation
- Compact optical modules
- Engineering and research light sources
- Customer-specific packaged VCSEL products
Sensing and Machine-Vision Development
For sensing and machine-vision applications, product selection should consider working distance, receiver sensitivity, detector response, optical path, pulse condition, beam divergence and external lens structure.
The 5mW single-emitter device can support compact optical-source evaluation and low-power detection systems where a small die footprint and low drive current are important.
For application-level source selection and optical-system planning, visit the Sensing & Machine Vision solution page.
Packaging and Optical-Module Development
The bare-die format allows packaging companies and optical-module developers to select the package structure, submount material, lens, diffuser, collimator and mechanical interface according to the final system design.
The device can support initial die-attach trials, wire-bonding validation, ceramic-submount development and customer-specific packaged VCSEL projects.
For wavelength, power, die-layout, package and optical-module requirements, submit a Custom Development & ODM request.
5. Evaluation Kit and Documentation Support
The 850nm 5mW VCSEL Bare Die can be evaluated for die-attach trials, wire-bonding verification, ceramic-submount development, driver-circuit evaluation and initial optical integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 850nm 5mW VCSEL Bare Die
- Corresponding product datasheet
- Die-dimension and assembly documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength
- Wavelength tolerance
- Optical output power
- Power-bin selection
- QCW driving conditions
- Die size and bond-pad requirements
- Ceramic-submount assembly
- Custom SMD, TO-can or ceramic packaging
- External lens and optical integration
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
6. Frequently Asked Questions
FAQ 1. What are the main specifications of the 850nm 5mW VCSEL Bare Die?
The device provides a typical peak wavelength of 850nm within a wavelength range of 840–860nm.
At a forward current of 7mA, a temperature of 25°C, a 0.5ms pulse width and 1% duty cycle, it provides 5mW minimum and 6mW typical optical output power.
The typical threshold current is 1.3mA, the typical forward voltage is 2.0V and the typical beam divergence is 20° using the 1/e² definition.
The device uses a single-emitter structure with a die size of 170 ±10μm × 170 ±10μm.
FAQ 2. How should the 850nm 5mW VCSEL Bare Die be packaged?
The device is supplied as an unpackaged semiconductor die and requires die attachment, wire bonding and package-level protection.
The top-side anode pad can be connected using gold-wire bonding, while the backside cathode can be attached to a suitable conductive submount or package base.
The package design should confirm die orientation, bond-pad position, die-attach material, wire-bonding parameters, thermal path and external optical structure.
Appropriate ESD protection must be used throughout storage, handling, assembly and testing.
FAQ 3. When should I select the 5mW device instead of a higher-power 850nm VCSEL bare die?
The 5mW device is suitable for low-power sensing, compact optical-source evaluation, small package designs and projects requiring low operating current.
Higher-power multi-emitter devices may be more suitable when the application requires greater illumination intensity, a longer working distance, a larger optical area or higher received signal levels.
The final model should be selected according to optical output, pulse condition, die size, emitter structure, package space, thermal design and system optical efficiency.