808nm 8W VCSEL Bare Die
808nm 8W multi-mode VCSEL bare die with 1958 emitters for QCW NIR source, hair removal equipment light-source development and custom packaging projects.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 808 nm typ.
- Optical Output Power
- 8 W class / 8.2 W typ. @ IF = 10 A, 25°C
- Emitter Configuration
- 1958 emitters
- Operating Mode
- QCW, 0.5 ms pulse width, 1% duty cycle
- Die Size
- 2320 μm × 2290 μm
- Recommended Assembly
- Wire bonding / ceramic submount / custom packaging
1. 808nm 8W VCSEL Bare Die for Packaging and Module Integration
The 808nm 8W VCSEL Bare Die is a high-power, multi-mode VCSEL array developed for chip-level packaging, ceramic-submount assembly and near-infrared optical-module integration. The device contains 1958 emitters and provides 8.2 W typical optical output under an IF = 10 A, 25°C QCW test condition.
The specified QCW operating condition uses a 0.5 ms pulse width and 1% duty cycle. Its 2320 μm × 2290 μm die dimensions, high emitter density and 8 W-class output position this model for projects requiring substantially higher optical power than compact low- and medium-power 808nm VCSEL chips.
This VCSEL bare die is intended for:
- OSAT semiconductor assembly and test providers
- VCSEL and laser-diode packaging companies
- Die-attach and gold wire-bonding engineering teams
- Ceramic-submount and chip-on-submount integrators
- High-power NIR optical-module manufacturers
- Lens, collimation and beam-shaping companies
- Medical beauty equipment light-source developers
- Laser-component distributors and second-source development teams
As an unpackaged semiconductor die, the product requires appropriate die attach, wire bonding, current delivery, heat dissipation, package protection and optical integration before it can operate as part of a finished optical source or device.
Contact 1ONELASER to discuss 808nm 8W VCSEL bare-die supply and packaging requirements
2. Optical Configuration and Packaging Direction
The standard 808nm 8W VCSEL Bare Die uses a high-density, multi-emitter structure for QCW high-power near-infrared source development. Its electrical, optical and mechanical parameters must be evaluated under the stated pulse and temperature conditions.
| Parameter | Value |
|---|---|
| Optical Output Power | 8.2 W typ. @ IF = 10 A |
| Center Wavelength | 808 nm typ. |
| Operating Condition | QCW, 0.5 ms pulse width, 1% duty cycle |
| Test Temperature | 25°C |
| Emitter Configuration | 1958 emitters |
| Forward Voltage | 2.0 V typ. |
| Threshold Current | 1800 mA typ. |
| Power Conversion Efficiency | 40% typ. |
| Beam Divergence | 18° typ. |
| Die Size | 2320 μm × 2290 μm |
The device can be evaluated for die attach, wire bonding, ceramic-submount assembly, chip-on-submount integration and application-specific high-power laser packages. Package design should account for operating current, pulse width, duty cycle, bond-pad structure, die area and the complete thermal path.
This page covers the standard multi-mode 808nm 8W VCSEL Bare Die. Projects that define a solid, centrally filled or specifically controlled far-field profile as a primary requirement should be reviewed as a separate Solid-Beam product configuration and verified against its corresponding datasheet.
View the complete 808nm VCSEL Bare Die Series
3. Packaging, Optical Module and Application Development
OSAT and Custom Laser Packaging
The 808nm 8W VCSEL Bare Die supports high-current die attach, gold wire bonding, ceramic-submount assembly and custom package development. Applicable packaging directions include:
- VCSEL die attach and bond-line evaluation
- Gold wire-bonding process development
- Ceramic-submount assembly
- Chip-on-submount optical sources
- Application-specific high-power laser packages
- Custom VCSEL array packaging
- COB optical-source development
- High-power NIR optical modules
The 1958-emitter array, 10 A test current and 8 W-class output require a suitable current-delivery structure and low-thermal-resistance heat-dissipation path. Final package materials, die-attach process, bonding method and heatsink configuration must be validated under the intended operating conditions.
Lens and Optical Module Integration
The device can support optical companies and module-development teams working on integrated 808nm sources using:
- Collimation-lens assemblies
- Diffuser-integrated optical sources
- Beam-shaping optical components
- Lens-integrated ceramic packages
- High-output near-infrared illumination modules
- Application-specific optical assemblies
Optical integration should be validated using the actual far-field distribution, beam divergence, package position, lens spacing, diffuser characteristics and complete module architecture. A typical divergence value alone does not define the final system spot size or irradiance distribution.
Downstream Application Development
The 808nm 8W VCSEL Bare Die can support component-level development and engineering evaluation for:
- Handheld hair removal equipment light-source development
- Floor-standing medical beauty equipment optical sources
- High-power near-infrared optical modules
- Industrial NIR illumination
- Machine-vision support illumination
- Engineering and research optical sources
- Custom high-power VCSEL modules
These are downstream development directions after the bare die has been integrated into an appropriate electrical, thermal, mechanical and optical system. The VCSEL bare die is not a finished medical or hair removal device and does not establish clinical performance, laser safety classification or regulatory approval.
The finished-device developer must independently validate irradiance, pulse energy, thermal behavior, optical uniformity, eye and skin safety, laser classification, complete-system performance and applicable market requirements.
Explore component-level VCSEL development for High-Power NIR & Optical Modules
4. Evaluation Kit and Documentation Support
The 808nm 8W VCSEL Bare Die can be evaluated for die-attach trials, wire-bonding verification, ceramic-submount development, driver testing, thermal evaluation and initial optical-module integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 808nm 8W VCSEL Bare Die from one selected configuration
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Emitter configuration and chip layout
- Pulse condition and driver requirements
- Die attach, wire bonding and ceramic-submount design
- Thermal path and heatsink configuration
- Lens, diffuser and optical-module integration
Request an 808nm 8W VCSEL Bare Die Evaluation Kit
Submit a custom-development request
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
5. Frequently Asked Questions
FAQ 1. What packaging and thermal design are suitable for the 808nm 8W VCSEL Bare Die?
The 808nm 8W VCSEL Bare Die can be evaluated for die attach, gold wire bonding, ceramic-submount assembly, chip-on-submount integration and custom high-power laser packages. Its 1958-emitter configuration, 2320 μm × 2290 μm die dimensions and 10 A QCW test current require an appropriate current-delivery structure, die-attach material and low-thermal-resistance heat-dissipation path. Package and heatsink performance must be validated under the intended pulse width, duty cycle and ambient conditions.
FAQ 2. When should I select the standard 808nm 8W VCSEL Bare Die instead of lower-power, 60W or Solid-Beam options?
The standard 8W model is positioned between the lower-power 808nm VCSEL chips and the larger 60W array. It provides 8.2 W typical QCW output from 1958 emitters in a 2320 μm × 2290 μm die format. Lower-power products may be more suitable when package size, drive current or thermal load must be reduced. The 808nm 60W High-Power VCSEL Bare Die should be evaluated when substantially higher output is required and the package can support its larger die, current-delivery and thermal requirements. If a specifically defined solid or centrally filled far-field profile is the primary selection criterion, the separate 808nm Solid-Beam configuration should be reviewed instead of assuming the standard 8W product has the same beam profile.
FAQ 3. Can the 808nm 8W VCSEL Bare Die be evaluated for hair removal equipment light-source and custom NIR module development?
Yes. The device can support component-level development for handheld or floor-standing hair removal equipment light sources, medical beauty equipment optical sources and custom high-power NIR modules. Engineering evaluation should cover the 808nm wavelength, QCW drive condition, optical output, beam distribution, package temperature, bonding reliability and complete optical architecture. The bare die is not a finished hair removal or medical device; the finished-device developer remains responsible for system performance, safety classification and regulatory compliance. Custom wavelength tolerance, optical output, emitter layout, package integration and thermal requirements can be discussed for qualified projects.