905nm
905nm 4W Multi Junction VCSEL Bare Die
905nm 4W multi-junction VCSEL bare die with 4.5W typical pulsed output at 1A, 5ns operation and 18° 1/e² divergence for rangefinding and OEM modules.
Specifications
- Product Type
- Multi-Junction VCSEL Bare Die
- Wavelength
- 905nm typ.; 895–915nm
- Optical Output Power
- 4W min. / 4.5W typ.
- Emitter Configuration
- Single Emitter
- Operating Mode
- QCW / Pulse
- Die Size
- 180 ±10μm × 180 ±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 905nm 4W Multi-Junction VCSEL Bare Die for Nanosecond Pulsed Source Development
The 905nm 4W Multi-Junction VCSEL Bare Die is a compact single-emitter near-infrared VCSEL chip designed for nanosecond-pulsed sensing, distance sensing evaluation, laser rangefinding, semiconductor packaging and custom optical-module development.
At a forward current of 1A, a temperature of 25°C, a pulse width of 5ns and a 0.1% duty cycle, the device provides 4W minimum and 4.5W typical optical output power.
The device provides a typical peak wavelength of 905nm within a specified wavelength range of 895–915nm. Its single-emitter structure, 50μm emitting aperture and 180 × 180μm-class die footprint support compact package layouts and higher-output nanosecond-pulsed optical-source designs.
The product is supplied as an unpackaged semiconductor bare die. It requires appropriate die attachment, wire bonding, package protection, electrical-path design and optical integration before use in a finished product or optical module.
Development directions include:
- Distance-sensing source evaluation
- Laser rangefinding
- Industrial distance sensing
- Object and presence detection
- Nanosecond pulsed-source evaluation
- Optical alignment and beam evaluation
- Ceramic-submount integration
- Custom SMD and TO-can packaging
- Engineering and research prototypes
2. Optical and Electrical Characteristics
The principal optical and electrical characteristics of the 905nm 4W Multi-Junction VCSEL Bare Die are shown below.
Parameter | Minimum | Typical | Maximum | Test Condition |
|---|---|---|---|---|
Peak Wavelength | 895nm | 905nm | 915nm | — |
Optical Output Power | 4W | 4.5W | — | IF = 1A, 25°C |
Threshold Current | — | 20mA | 40mA | — |
Forward Voltage | 16V | 20V | 25V | IF = 1A |
Differential Resistance | — | 15Ω | — | — |
Power Conversion Efficiency | 20% | 26% | — | IF = 1A |
Beam Divergence, 1/e² | 15° | 18° | 22° | IF = 1A |
The optical-output and beam-divergence values are specified under nanosecond pulse conditions with a 5ns pulse width and 0.1% duty cycle at 25°C.
This product should not be interpreted as a continuous-wave device. The 4.5W typical optical-output value applies only under the specified short-pulse test conditions.
Performance in the final package will also depend on drive current, pulse shape, pulse rise and fall time, repetition rate, electrical overshoot, package inductance, die-attach quality, wire-bonding process and device temperature.
Beam divergence is specified using the 1/e² definition and should not be directly replaced by an FWHM or D86 value.
The values above are representative parameters from the corresponding product specification. Final product selection and integration should be confirmed using the complete datasheet.
3. Bare Die Structure and Packaging Integration
The 905nm 4W VCSEL uses a compact single-emitter bare-die structure for semiconductor packaging and optical-module integration.
The multi-junction designation describes the internal vertically integrated junction structure. This product still uses one optical emitting aperture.
The main mechanical characteristics include:
Mechanical Parameter | Specification |
|---|---|
Die Size | 180 ±10μm × 180 ±10μm |
Die Thickness | 150 ±10μm |
Number of Emitters | 1 |
Emitting Aperture | 50 ±1μm |
Anode Pad | 90 ±3μm × 90 ±3μm |
Backside Cathode | 180 ±10μm × 180 ±10μm |
The 50μm emitting aperture provides a larger source area than the 1W single-emitter model while retaining the same 180 × 180μm-class die footprint.
Possible packaging directions include:
- Ceramic-submount assembly
- Chip-on-board integration
- Custom SMD packages
- TO-can packages
- Ceramic laser packages
- Compact pulsed-source modules
- Lens-integrated optical sources
- Application-specific 905nm packages
The die-attach material, bonding process, package dimensions, electrode orientation, electrical path and optical structure should be confirmed according to the customer’s production process.
The device is ESD-sensitive. Appropriate electrostatic protection should be used during storage, handling, die placement, wire bonding, testing and package assembly.
For projects requiring alternative optical-output levels or multi-emitter array structures, view the 905nm Multi-Junction VCSEL Bare Die Series.
4. Application Development
The 905nm 4W Multi-Junction VCSEL Bare Die is primarily intended for nanosecond-pulsed near-infrared source projects requiring a compact die footprint, a single emitting aperture and higher optical output than the 1W model.
Application directions include:
- Distance-sensing source evaluation
- Laser rangefinding
- Industrial distance sensing
- Object detection
- Presence and proximity sensing
- Optical timing and trigger systems
- Beam-profile evaluation
- Compact optical modules
- Engineering and research light sources
- Customer-specific packaged VCSEL products
Rangefinding and Distance-Sensing Development
For rangefinding and distance-sensing applications, product selection should consider working distance, receiver sensitivity, detector timing, target reflectivity, optical transmission, pulse condition, beam divergence and external lens structure.
The 4W single-emitter device can support higher-output optical-source evaluation and pulsed detection systems where a compact die footprint, a 50μm emitting aperture and a specified 1A test current are suitable.
Final detection distance cannot be determined from the VCSEL optical-output value alone. It also depends on the complete transmitter, receiver, optics, signal-processing system and environmental conditions.
For rangefinding and distance-sensing projects, product selection should consider peak optical output, pulse width, repetition rate, receiver sensitivity, detector timing, target reflectivity, optical transmission and the required field of view.
The VCSEL bare die is one component of the complete transmitter system. Final detection distance and system performance depend on the driver, package, optics, receiver, signal processing and environmental conditions.
For application-level sensing-source selection and optical-system planning, visit the Sensing & Machine Vision solution page.
For broader high-power NIR packaging, thermal-path and optical-module development, visit the High-Power NIR & Optical Modules solution page.
Packaging and Optical-Module Development
The bare-die format allows packaging companies and optical-module developers to select the package structure, submount material, lens, diffuser, collimator and mechanical interface according to the final system design.
The device can support initial die-attach trials, wire-bonding validation, ceramic-submount development and customer-specific packaged VCSEL projects.
The final optical field depends on die placement, package-window design, lens focal length, lens-to-die spacing, diffuser characteristics, mechanical tolerance and optical alignment.
The component does not independently determine the eye-safety classification, detection range or regulatory status of the customer’s completed system.
For wavelength, power, die-layout, package and optical-module requirements, submit a Custom Development & ODM request.
5. Evaluation Kit and Documentation Support
The 905nm 4W Multi-Junction VCSEL Bare Die can be evaluated for die-attach trials, wire-bonding verification, ceramic-submount development, nanosecond pulse-driver evaluation and initial optical integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 905nm 4W Multi-Junction VCSEL Bare Die
- Corresponding product datasheet
- Die-dimension and assembly documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength
- Wavelength tolerance
- Optical output power
- Power-bin selection
- Nanosecond pulse conditions
- Die size and bond-pad requirements
- Ceramic-submount assembly
- Custom SMD, TO-can or ceramic packaging
- External lens and optical integration
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
6. Frequently Asked Questions
FAQ 1. What are the main specifications of the 905nm 4W Multi-Junction VCSEL Bare Die?
The device provides a typical peak wavelength of 905nm within a specified wavelength range of 895–915nm.
At a forward current of 1A, a temperature of 25°C, a 5ns pulse width and 0.1% duty cycle, it provides 4W minimum and 4.5W typical optical output power.
The typical threshold current is 20mA, the typical forward voltage is 20V and the typical beam divergence is 18° using the 1/e² definition.
The device uses a single-emitter structure with a 50 ±1μm emitting aperture and a die size of 180 ±10μm × 180 ±10μm.
FAQ 2. How should the 905nm 4W VCSEL Bare Die be packaged?
The device is supplied as an unpackaged semiconductor die and requires die attachment, wire bonding and package-level protection.
The package design should confirm die orientation, electrode structure, die-attach material, wire-bonding parameters, electrical-path inductance, thermal path and external optical structure.
The anode pad is 90 ±3μm × 90 ±3μm, while the backside cathode corresponds to the full die area.
Appropriate ESD protection must be used throughout storage, handling, assembly and testing.
FAQ 3. When should I select the 4W device instead of another 905nm VCSEL bare die?
The 4W device is suitable when a compact single-emitter structure is required together with higher optical output than the 1W model.
It is particularly relevant for projects requiring a 50μm emitting aperture, a 180 × 180μm-class die and a controlled 1A nanosecond pulse.
Multi-emitter devices may be more suitable when the application requires a distributed emitting structure or significantly higher peak optical output.