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905nm 70W VCSEL Laser Chip Multi Junction_1 D-V0905M-070W-0016-06 (1) (1)
905nm 1W VCSEL Laser Chip Multi Junction_1 D-V0905M-1000-0007-06
905nm 4W VCSEL Laser Chip Multi Junction_1 D-V0905M-4000-0007-06
905nm 7W VCSEL Laser Chip Multi Junction_1 D-V0905M-7000-0010-06 (1)
905nm

905nm Multi Junction VCSEL Bare Die Series

905nm multi-junction VCSEL bare die series with 1W, 4W, 7W and 70W pulsed options for LiDAR, dToF, rangefinding and custom packaging.

Specifications

Product Type
Multi-Junction VCSEL Bare Die
Wavelength
905nm typ.; 895–915nm
Optical Output Power
800mW min. to 70W typ., model-dependent
Emitter Configuration
1 / 1 / 7 / 52 emitters
Operating Mode
Pulse, 5ns pulse width, 0.1% duty cycle
Die Size
180 × 180μm to 370 × 450μm
Recommended Assembly
Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging

1. 905nm Multi-Junction VCSEL Bare Die Series for Nanosecond Pulsed Source Development

The 905nm Multi-Junction VCSEL Bare Die Series includes four nanosecond-pulsed near-infrared source options for LiDAR evaluation, direct time-of-flight development, laser rangefinding, industrial sensing, semiconductor packaging and custom optical-transmitter integration.
The series includes:
  • 905nm 1W Multi-Junction VCSEL Bare Die
  • 905nm 4W Multi-Junction VCSEL Bare Die
  • 905nm 7W Multi-Junction VCSEL Bare Die
  • 905nm 70W Multi-Junction VCSEL Bare Die
All four products provide a typical peak wavelength of 905nm within a specified wavelength range of 895–915nm.
Their optical-output values are characterized at:
  • 25°C test temperature
  • 5ns pulse width
  • 0.1% duty cycle
These products are intended for controlled nanosecond-pulse operation. Their optical-output ratings must not be interpreted as continuous-wave or long-pulse ratings.
The series combines two single-emitter devices and two multi-emitter VCSEL arrays:
  • 1W single-emitter die with a 20 ±1μm emitting aperture
  • 4W single-emitter die with a 50 ±1μm emitting aperture
  • 7W die with a seven-emitter array
  • 70W die with a 52-emitter array
This product range allows engineering teams to select a 905nm VCSEL bare die according to peak optical output, pulse-current capability, emitter configuration, die dimensions, package architecture and optical-system requirements.
Development directions include:
  • LiDAR transmitter evaluation
  • Direct time-of-flight development
  • Laser rangefinding
  • Industrial distance sensing
  • Object and presence detection
  • Nanosecond pulse-driver evaluation
  • Custom ceramic packaging
  • Low-inductance chip-on-board integration
  • Lens, diffuser and collimator integration
  • Engineering and research systems
The products are supplied as unpackaged semiconductor bare dies. Conductive die attachment, wire bonding, package protection, low-inductance electrical design and optical integration are required before use in a completed module.
Contact 1ONELASER to discuss 905nm multi-junction VCSEL selection and packaging requirements.

2. 1W, 4W, 7W and 70W Model Selection

The 905nm Multi-Junction VCSEL Bare Die Series provides four optical-output and emitter-layout configurations.
Product
Optical Output
Drive Current
Pulse Condition
Beam Divergence
Emitters
Die Size
905nm 1W Multi-Junction VCSEL Bare Die
800mW min. / 1W typ.
200mA
5ns, 0.1%, 25°C
18° typ., 1/e²
1
180 × 180μm
905nm 4W Multi-Junction VCSEL Bare Die
4W min. / 4.5W typ.
1A
5ns, 0.1%, 25°C
18° typ., 1/e²
1
180 × 180μm
905nm 7W Multi-Junction VCSEL Bare Die
5.6W min. / 7W typ.
1.4A
5ns, 0.1%, 25°C
18° typ., 1/e²
7
278 × 210μm
905nm 70W Multi-Junction VCSEL Bare Die
60W min. / 70W typ.
15A
5ns, 0.1%, 25°C
18° typ., 1/e²
52
370 × 450μm
The optical-output values apply only under the stated nanosecond-pulse conditions.
The products should not be compared by nominal wattage alone. Selection should also consider:
  • Single-emitter or multi-emitter structure
  • Emitting-aperture size
  • Peak pulse current
  • Driver rise and fall time
  • Package and PCB inductance
  • Die dimensions
  • Bond-wire configuration
  • Required optical field
  • Receiver sensitivity
  • Working distance

905nm 1W Multi-Junction VCSEL Bare Die

The 905nm 1W Multi-Junction VCSEL Bare Die provides 800mW minimum and 1W typical pulsed optical output at a specified drive current of 200mA.
It uses one emitter with a 20 ±1μm emitting aperture in a compact 180 × 180μm-class die.
This model is suitable for:
  • Lower-current pulse-driver development
  • Compact single-emitter optical sources
  • Initial package and optical evaluation
  • Small custom transmitter packages
  • dToF and rangefinding prototypes

905nm 4W Multi-Junction VCSEL Bare Die

The 905nm 4W Multi-Junction VCSEL Bare Die provides 4W minimum and 4.5W typical pulsed optical output at a specified drive current of 1A.
It uses one emitter with a larger 50 ±1μm emitting aperture while retaining a compact 180 × 180μm-class die footprint.
This model is suitable when:
  • Higher output is required from a single emitter
  • A 50μm emitting aperture matches the optical design
  • A compact die footprint must be maintained
  • The driver can provide a controlled 1A nanosecond pulse

905nm 7W Multi-Junction VCSEL Bare Die

The 905nm 7W Multi-Junction VCSEL Bare Die provides 5.6W minimum and 7W typical pulsed optical output at a specified drive current of 1.4A.
It uses seven emitters with 20 ±1μm apertures in a 278 × 210μm-class die.
This model provides:
  • A compact multi-emitter VCSEL array
  • Higher peak output than the single-emitter models
  • A distributed emitting structure
  • Moderate pulse-current requirements
  • Flexible custom-package integration

905nm 70W Multi-Junction VCSEL Bare Die

The 905nm 70W Multi-Junction VCSEL Bare Die provides 60W minimum and 70W typical pulsed optical output at a specified drive current of 15A.
It uses a 52-emitter array in a 370 × 450μm-class die.
This is the highest-output product in the current 905nm bare-die series and is suitable when:
  • High peak optical output is required
  • A 52-emitter array matches the transmitter design
  • The driver can provide a controlled 15A nanosecond pulse
  • Package inductance and current distribution can be closely managed
  • A custom high-current transmitter package is being developed
The final model should be selected using the complete optical, electrical, mechanical and system-level requirements rather than optical output alone.

3. Bare Die Structure and Packaging Integration

The four products use different emitting structures and mechanical dimensions.
Mechanical Parameter
1W Version
4W Version
7W Version
70W Version
Die Size
180 ±10μm × 180 ±10μm
180 ±10μm × 180 ±10μm
278 ±10μm × 210 ±10μm
370 ±10μm × 450 ±10μm
Die Thickness
150 ±10μm
150 ±10μm
150 ±10μm
100 ±10μm
Number of Emitters
1
1
7
52
Emitting Aperture
20 ±1μm
50 ±1μm
20 ±1μm
20 ±1μm
Anode Pad
Not specified
90 ±3μm × 90 ±3μm
175 ±3μm × 95 ±3μm
330μm × 110μm
Backside Cathode
Not specified
Full die area
Full die area
Full die area
The 1W and 4W models use single-emitter structures, while the 7W and 70W products use multi-emitter arrays.
Possible integration formats include:
  • Conductive die attachment
  • Gold-wire bonding
  • Ceramic-submount assembly
  • Low-inductance chip-on-board integration
  • Custom VCSEL transmitter packages
  • Lens-integrated optical sources
  • Diffuser-integrated transmitters
  • Collimated optical-source modules
  • Application-specific LiDAR transmitters
The package should be designed around the selected die rather than assuming that one electrical and mechanical structure can support every power level.
Package development should consider:
  • Die orientation
  • Electrode structure
  • Die-attach material
  • Bond-wire length and quantity
  • Bond-wire current capacity
  • Electrical-path symmetry
  • Package and PCB inductance
  • Ground-return structure
  • Transient voltage overshoot
  • Optical-axis alignment
  • Mechanical protection
  • Device temperature
For the 70W product, peak-current distribution, bond-wire current capacity, electrical parasitics and transient behavior require particular attention.
The dies are ESD-sensitive semiconductor components. Appropriate electrostatic-control procedures are required throughout storage, handling, die placement, wire bonding, package assembly and testing.
For projects requiring completed surface-mount packages for direct PCB placement and reflow assembly, view the 905nm Multi-Junction VCSEL SMD Series.

4. Application Development

The 905nm wavelength and nanosecond-pulse operation support near-infrared optical-source development for systems requiring short, synchronized transmitter pulses.
Application directions include:
  • LiDAR transmitter evaluation
  • Direct time-of-flight systems
  • Laser rangefinding
  • Industrial distance measurement
  • Object detection
  • Presence and proximity sensing
  • Optical trigger and timing systems
  • Laboratory pulsed-source development
  • Custom packaged VCSEL transmitters
  • Optical-module integration

LiDAR, dToF and Laser-Rangefinding Development

For LiDAR, direct time-of-flight and laser-rangefinding projects, product selection should consider:
  • Peak optical output
  • Pulse width
  • Repetition rate
  • Receiver sensitivity
  • Detector timing
  • Target reflectivity
  • Optical transmission loss
  • Transmitter field of view
  • Receiver field of view
  • Signal-processing architecture
  • Operating environment
The VCSEL bare die is one component of the complete transmitter system.
Final detection distance, ranging accuracy and system performance depend on the driver, package, optics, receiver, timing electronics, signal processing, target conditions and environmental factors.
These component-level products do not independently establish the eye-safety classification, detection range or regulatory status of the customer’s completed system.
For application-level sensing-source selection and optical-system planning, visit the Sensing & Machine Vision solution page.
For broader high-power NIR packaging, thermal-path and optical-module development, visit the High-Power NIR & Optical Modules solution page.

Packaging and Optical-Module Development

The bare-die format allows packaging companies and optical-module developers to select the package structure, submount material, electrical path, optical window, lens, diffuser, collimator and mechanical interface according to the final system design.
Possible development directions include:
  • Ceramic VCSEL packages
  • Low-inductance transmitter assemblies
  • Chip-on-board optical sources
  • Lens-integrated VCSEL packages
  • Diffuser-integrated transmitters
  • Collimated optical modules
  • Customer-specific LiDAR transmitters
  • Application-specific rangefinding modules
The final optical field depends on emitter layout, die placement, package-window geometry, lens focal length, lens-to-die spacing, diffuser characteristics, mechanical tolerance and optical alignment.
For wavelength, optical output, die layout, package structure, optics and transmitter-module requirements, submit a Custom Development & ODM request.

5. Evaluation Kit and Documentation Support

The 905nm Multi-Junction VCSEL Bare Die Series is available for pulse-driver development, die-attach evaluation, wire-bonding verification, package design and initial optical testing.
The Evaluation Kit includes:
  • 10 pcs / KIT
  • One selected 1W, 4W, 7W or 70W model per kit
  • Corresponding product datasheet
  • Corresponding die-dimension and assembly documentation
  • International shipping quoted according to destination
Available evaluation options include:
  • 905nm 1W Multi-Junction VCSEL Bare Die
  • 905nm 4W Multi-Junction VCSEL Bare Die
  • 905nm 7W Multi-Junction VCSEL Bare Die
  • 905nm 70W Multi-Junction VCSEL Bare Die
Evaluation can support:
  • Nanosecond pulse-driver testing
  • Conductive die-attach trials
  • Gold-wire bonding development
  • Ceramic-submount evaluation
  • Package-parasitic analysis
  • Optical alignment
  • Lens and diffuser selection
  • Beam-profile evaluation
  • Initial LiDAR and dToF testing
  • Initial rangefinding validation
The following requirements can be discussed according to the project:
  • Peak optical-output selection
  • Pulse width and repetition rate
  • Pulse-current requirements
  • Power-bin selection
  • Die and bond-pad structure
  • Low-inductance ceramic packaging
  • Wire-bond configuration
  • Lens and diffuser integration
  • Beam-shaping requirements
  • Custom transmitter modules
  • Volume-supply planning
Request a 905nm Multi-Junction VCSEL Bare Die Evaluation Kit.
Submit a Custom Development & ODM request.
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.

6. Frequently Asked Questions

FAQ 1. What models are included in the 905nm Multi-Junction VCSEL Bare Die Series?

The series includes 1W, 4W, 7W and 70W product classes.
The 1W and 4W models use single emitters. The 7W model uses a seven-emitter array, while the 70W model uses a 52-emitter array.
All four products are characterized at 25°C using a 5ns pulse width and 0.1% duty cycle.
The appropriate model should be selected according to required peak output, drive current, emitter layout, die dimensions, package structure and optical-system requirements.

FAQ 2. How should the 905nm VCSEL bare dies be packaged?

The products are supplied as unpackaged semiconductor dies and require conductive die attachment, wire bonding and package-level protection.
The package design should confirm:
  • Die orientation
  • Electrode structure
  • Die-attach material
  • Bond-wire arrangement
  • Peak-current capability
  • Package inductance
  • Ground-return path
  • Optical-window structure
  • External optics
  • ESD protection
The 70W model requires particular attention to peak-current distribution, parasitic inductance, transient overshoot and bond-wire current capacity.
The package and driver should be validated under the intended pulse width, repetition rate and operating temperature.

FAQ 3. Should I select a 905nm VCSEL bare die or a completed SMD package?

Select a bare die when the project requires:
  • A customer-designed semiconductor package
  • Conductive die attachment
  • Gold-wire bonding
  • Ceramic-submount integration
  • Proprietary optical packaging
  • Application-specific electrical and optical structures
Select a completed SMD package when the project requires direct PCB placement, automated SMT assembly, reflow soldering and faster transmitter integration.
The appropriate format depends on the customer’s packaging capability, PCB architecture, electrical parasitics, thermal path and optical-system design.
For completed 3030 and 3535 surface-mount options, view the 905nm Multi-Junction VCSEL SMD Series.



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