905nm
905nm 7W Multi Junction VCSEL Bare Die
905nm 7W multi-junction VCSEL bare die with 7W typical pulsed output at 1.4A, 5ns operation and a seven-emitter array for rangefinding and OEM modules.
Specifications
- Product Type
- Multi-Junction VCSEL Bare Die
- Wavelength
- 905nm typ.; 895–915nm
- Optical Output Power
- 5.6W min. / 7W typ.
- Emitter Configuration
- 7 Emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 278 ±10μm × 210 ±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
905nm 7W Multi-Junction VCSEL Bare Die for Nanosecond Pulsed Source Development
The 905nm 7W Multi-Junction VCSEL Bare Die is a compact seven-emitter near-infrared VCSEL array designed for nanosecond-pulsed sensing, distance sensing evaluation, laser rangefinding, semiconductor packaging and custom optical-module development.
At a forward current of 1.4A, a temperature of 25°C, a pulse width of 5ns and a 0.1% duty cycle, the device provides 5.6W minimum and 7W typical optical output power.
The device provides a typical peak wavelength of 905nm within a specified wavelength range of 895–915nm. Its seven-emitter structure, 20μm emitting apertures and 278 × 210μm-class die footprint support compact multi-emitter package layouts and higher-output pulsed transmitter development.
The product is supplied as an unpackaged semiconductor bare die. It requires appropriate die attachment, wire bonding, package protection, electrical-path design and optical integration before use in a finished product or optical module.
Development directions include:
- Distance-sensing source evaluation
- Laser rangefinding
- Pulsed rangefinding-source evaluation
- Industrial distance sensing
- Object and presence detection
- Nanosecond pulsed-source evaluation
- Multi-emitter beam evaluation
- Ceramic-submount integration
- Custom SMD and TO-can packaging
- Engineering and research prototypes
2. Optical and Electrical Characteristics
The principal optical and electrical characteristics of the 905nm 7W Multi-Junction VCSEL Bare Die are shown below.
Parameter | Minimum | Typical | Maximum | Test Condition |
|---|---|---|---|---|
Peak Wavelength | 895nm | 905nm | 915nm | — |
Optical Output Power | 5.6W | 7W | — | IF = 1.4A, 25°C |
Threshold Current | — | 28mA | 70mA | — |
Forward Voltage | 16V | 20V | 25V | IF = 1.4A |
Differential Resistance | — | 7Ω | — | — |
Power Conversion Efficiency | 20% | 26% | — | IF = 1.4A |
Beam Divergence, 1/e² | 15° | 18° | 22° | IF = 1.4A |
The optical-output and beam-divergence values are specified under nanosecond pulse conditions with a 5ns pulse width and 0.1% duty cycle at 25°C.
This product should not be interpreted as a continuous-wave device. The 7W optical-output value applies only under the specified short-pulse test conditions.
Performance in the final package will also depend on drive current, pulse shape, pulse rise and fall time, repetition rate, electrical overshoot, package inductance, die-attach quality, wire-bonding process and device temperature.
Beam divergence is specified using the 1/e² definition and should not be directly replaced by an FWHM or D86 value.
The values above are representative parameters from the corresponding product specification. Final product selection and integration should be confirmed using the complete datasheet.
3. Bare Die Structure and Packaging Integration
The 905nm 7W VCSEL uses a seven-emitter bare-die array structure for semiconductor packaging and optical-module integration.
The multi-junction designation describes the internal vertically integrated junction structure, while the emitter configuration describes the seven separate optical emitting apertures on the die.
The main mechanical characteristics include:
Mechanical Parameter | Specification |
|---|---|
Die Size | 278 ±10μm × 210 ±10μm |
Die Thickness | 150 ±10μm |
Number of Emitters | 7 |
Emitting Aperture | 20 ±1μm |
Anode Pad | 175 ±3μm × 95 ±3μm |
Backside Cathode | 278 ±10μm × 210 ±10μm |
The seven-emitter structure provides a distributed optical-source layout within a compact die footprint.
Possible packaging directions include:
- Ceramic-submount assembly
- Chip-on-board integration
- Custom SMD packages
- TO-can packages
- Ceramic laser packages
- Compact pulsed-source modules
- Lens-integrated VCSEL arrays
- Application-specific 905nm transmitters
The die-attach material, bonding process, package dimensions, electrode orientation, electrical path and optical structure should be confirmed according to the customer’s production process.
The device is ESD-sensitive. Appropriate electrostatic protection should be used during storage, handling, die placement, wire bonding, testing and package assembly.
For projects requiring single-emitter alternatives or a higher-output 52-emitter array, view the 905nm Multi-Junction VCSEL Bare Die Series.
4. Application Development
The 905nm 7W Multi-Junction VCSEL Bare Die is primarily intended for nanosecond-pulsed near-infrared source projects requiring a compact multi-emitter structure, moderate pulse current and higher optical output than the single-emitter products.
Application directions include:
- Distance-sensing source evaluation
- Laser rangefinding
- Pulsed rangefinding-source evaluation
- Industrial distance sensing
- Object detection
- Presence and proximity sensing
- Optical timing and trigger systems
- Multi-emitter beam evaluation
- Compact optical modules
- Customer-specific packaged VCSEL arrays
Rangefinding and Distance-Sensing Development
For rangefinding and distance-sensing applications, product selection should consider working distance, receiver sensitivity, detector timing, target reflectivity, optical transmission, pulse condition, emitter layout, beam divergence and external lens structure.
The seven-emitter device can support higher-output transmitter evaluation where a compact array structure, 20μm emitting apertures and a specified 1.4A test current are suitable.
Final detection distance cannot be determined from the VCSEL optical-output value alone. It also depends on the complete transmitter, receiver, optics, signal-processing system and environmental conditions.
For rangefinding and distance-sensing projects, product selection should consider peak optical output, pulse width, repetition rate, receiver sensitivity, detector timing, target reflectivity, optical transmission and the required field of view.
The VCSEL bare die is one component of the complete transmitter system. Final detection distance and system performance depend on the driver, package, optics, receiver, signal processing and environmental conditions.
For application-level sensing-source selection and optical-system planning, visit the Sensing & Machine Vision solution page.
For broader high-power NIR packaging, thermal-path and optical-module development, visit the High-Power NIR & Optical Modules solution page.
Packaging and Optical-Module Development
The bare-die format allows packaging companies and optical-module developers to select the package structure, submount material, lens, diffuser, collimator and mechanical interface according to the final system design.
The seven-emitter layout should be considered during lens selection, optical alignment and package-window development.
The device can support die-attach trials, wire-bonding validation, ceramic-submount development and customer-specific packaged VCSEL-array projects.
The final optical field depends on emitter layout, die placement, package-window design, lens focal length, lens-to-die spacing, diffuser characteristics, mechanical tolerance and optical alignment.
The component does not independently determine the eye-safety classification, detection range or regulatory status of the customer’s completed system.
For wavelength, power, die-layout, package and optical-module requirements, submit a Custom Development & ODM request.
5. Evaluation Kit and Documentation Support
The 905nm 7W Multi-Junction VCSEL Bare Die can be evaluated for die-attach trials, wire-bonding verification, ceramic-submount development, nanosecond pulse-driver evaluation and initial optical integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 905nm 7W Multi-Junction VCSEL Bare Die
- Corresponding product datasheet
- Die-dimension and assembly documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength
- Wavelength tolerance
- Optical output power
- Power-bin selection
- Nanosecond pulse conditions
- Emitter layout
- Die size and bond-pad requirements
- Ceramic-submount assembly
- Custom SMD, TO-can or ceramic packaging
- External lens and optical integration
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
6. Frequently Asked Questions
FAQ 1. What are the main specifications of the 905nm 7W Multi-Junction VCSEL Bare Die?
The device provides a typical peak wavelength of 905nm within a specified wavelength range of 895–915nm.
At a forward current of 1.4A, a temperature of 25°C, a 5ns pulse width and 0.1% duty cycle, it provides 5.6W minimum and 7W typical optical output power.
The typical threshold current is 28mA, the typical forward voltage is 20V and the typical beam divergence is 18° using the 1/e² definition.
The device uses a seven-emitter structure with 20 ±1μm emitting apertures and a die size of 278 ±10μm × 210 ±10μm.
FAQ 2. How should the 905nm 7W VCSEL Bare Die be packaged?
The device is supplied as an unpackaged semiconductor die and requires die attachment, wire bonding and package-level protection.
The package design should confirm die orientation, electrode structure, die-attach material, wire-bonding parameters, electrical-path inductance, thermal path and external optical structure.
The seven-emitter layout should also be considered when selecting the package window, lens and optical alignment method.
Appropriate ESD protection must be used throughout storage, handling, assembly and testing.
FAQ 3. When should I select the 7W device instead of a single-emitter or 70W VCSEL array?
The 7W product is suitable when the project requires a compact multi-emitter structure and higher optical output than the 1W or 4W single-emitter products.
It provides seven emitting apertures in a 278 × 210μm-class die while using a lower specified pulse current than the 70W product.
The 70W product may be more suitable when significantly higher peak optical output and a larger 52-emitter structure are required.