940nm 300mW VCSEL Bare Die
940nm 300mW VCSEL bare die with 48 emitters and 290mW typical output for pulsed NIR sensing, illumination, custom packaging and OEM optical modules.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 940 nm typ.; 930–950 nm
- Optical Output Power
- 275mW min. / 290mW typ. / 320mW max.
- Emitter Configuration
- 48 emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 330±10μm × 330±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 940nm 300mW VCSEL Bare Die for Medium-Power NIR Packaging and Module Integration
The 940nm 300mW VCSEL Bare Die is a medium-power, multi-emitter, multi-mode VCSEL chip developed for chip-level packaging, ceramic-submount assembly and pulsed near-infrared optical-module integration. The device contains 48 emitters and provides 275mW minimum, 290mW typical and 320mW maximum optical output at IF = 350mA under a QCW test condition at 25°C.
Its 330 ±10μm × 330 ±10μm die dimensions, 48-emitter configuration and 300mW-class optical output position this model for medium-power pulsed NIR illumination, active optical detection and custom package development.
This 940nm VCSEL bare die is intended for:
- OSAT semiconductor assembly and test providers
- VCSEL and laser-diode packaging companies
- Die-attach and gold wire-bonding engineering teams
- Ceramic-submount and chip-on-board integrators
- Medium-power NIR optical-module manufacturers
- Pulsed illumination-source developers
- Machine-vision and optical-detection companies
- Industrial sensing and inspection companies
- Lens, diffuser and beam-shaping companies
- Laser-component distributors and second-source development teams
As an unpackaged semiconductor die, this product requires suitable die attachment, wire bonding, electrical driving, package protection and optical integration. It is not supplied as a finished SMD device, COB source, packaged laser or complete optical module.
Contact 1ONELASER to discuss 940nm 300mW VCSEL bare-die supply and packaging requirements.
2. Optical Configuration and Packaging Direction
The 940nm 300mW VCSEL Bare Die uses a 48-emitter structure for medium-power pulsed near-infrared source development. Its electrical, optical and mechanical parameters must be evaluated under the stated QCW condition, drive current, pulse width, duty cycle and temperature.
| Parameter | Value |
|---|---|
| Optical Output Power | 275mW min. / 290mW typ. / 320mW max. at IF = 350mA |
| Center Wavelength | 940nm typ. |
| Specified Wavelength Range | 930nm min. / 940nm typ. / 950nm max. |
| Operating Condition | QCW, 0.1ms pulse width, 10% duty cycle, 25°C |
| Emitter Configuration | 48 emitters |
| Forward Voltage | 1.9V min. / 2.0V typ. / 2.1V max. at IF = 350mA |
| Threshold Current | 25mA min. / 40mA typ. / 55mA max. |
| Differential Resistance | 1.2Ω typ. |
| Slope Efficiency | 0.9W/A min. / 1.0W/A typ. / 1.1W/A max. |
| Power Conversion Efficiency | 40% min. / 42% typ. / 44% max. at IF = 350mA |
| Beam Divergence | 19° min. / 20° typ. / 22° max. at 1/e² |
| Emitting Aperture | 10 ±1μm |
| Die Size | 330 ±10μm × 330 ±10μm |
| Die Thickness | 130 ±10μm |
| Anode Pad Size | 98 ±3μm × 110 ±3μm |
| Backside Cathode Area | 330 ±10μm × 330 ±10μm |
The device can be evaluated for conductive die attachment, gold wire bonding, ceramic-submount assembly, chip-on-board integration and application-specific laser packages. Package design should account for the top-side anode pad, full-area backside cathode, die dimensions, attachment material, current-delivery path, bonding process and optical alignment.
The stated 290mW typical value is a component-level test result under the specified QCW condition. It should not be interpreted as a continuous-wave output rating. Final optical output, wavelength, operating temperature and reliability depend on the completed package, driver, pulse condition, thermal path, optics and module architecture.
View the complete 940nm VCSEL Bare Die Series.
3. Packaging, Optical Module and Application Development
OSAT and Custom VCSEL Packaging
The 940nm 300mW VCSEL Bare Die supports die attachment, gold wire bonding, ceramic-submount assembly and custom semiconductor-laser package development. Applicable packaging directions include:
- VCSEL die attachment and bond-line evaluation
- Gold wire-bonding process development
- Ceramic-submount assembly
- Chip-on-board optical sources
- Custom SMD VCSEL packages
- Application-specific ceramic packages
- Pulsed NIR source packages
- Medium-power NIR optical modules
The 48-emitter configuration, 350mA test current and 300mW-class pulsed output require suitable current delivery, die attachment and package protection. Die orientation, anode-pad access, backside electrical contact, ESD control and optical-axis position must be validated under the intended assembly process.
Lens and Optical Module Integration
The device can support optical companies and module-development teams working on integrated 940nm near-infrared sources using:
- Collimation-lens assemblies
- Diffuser-integrated optical sources
- Beam-shaping and homogenization components
- Lens-integrated ceramic packages
- FOV-controlled NIR illumination sources
- Machine-vision support sources
- Application-specific optical assemblies
Optical integration should be validated using the actual far-field distribution, 20° typical beam divergence, emitter arrangement, emitting aperture, package-window geometry, lens spacing, diffuser characteristics and complete module architecture. Beam divergence alone does not define the final spot size, irradiance distribution or usable optical field.
Downstream Application Development
The 940nm 300mW VCSEL Bare Die can support component-level development and engineering evaluation for:
- Medium-power near-infrared illumination
- Active optical detection
- Machine-vision support illumination
- Camera-related NIR source development
- Industrial optical detection
- Industrial inspection systems
- Pulsed sensing-source modules
- Engineering and research light sources
- Customer-specific packaged VCSEL products
These are downstream development directions after the bare die has been integrated into a suitable electrical, mechanical and optical system. The component does not independently establish detection distance, optical uniformity, eye-safety classification, finished-device performance or regulatory approval.
The finished-device developer must independently validate the driver condition, received optical signal, working distance, package temperature, beam distribution, laser classification, electrical safety and complete-system requirements.
Explore component-level VCSEL development for Sensing & Machine Vision.
4. Evaluation Kit and Documentation Support
The 940nm 300mW VCSEL Bare Die can be evaluated for die-attach trials, wire-bonding verification, ceramic-submount development, QCW driver testing and initial medium-power optical-module integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 940nm 300mW VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Emitter configuration and chip layout
- QCW driver, pulse width and duty-cycle requirements
- Die attachment, wire bonding and ceramic-submount design
- Custom ceramic or SMD packaging
- Lens, diffuser and optical-module integration
- Volume-supply requirements
Request a 940nm 300mW VCSEL Bare Die Evaluation Kit.
Submit a Custom Development & ODM request.
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
5. Frequently Asked Questions
FAQ 1. What packaging and operating conditions are required for the 940nm 300mW VCSEL Bare Die?
The device is supplied as an unpackaged semiconductor die and requires conductive die attachment, top-side wire bonding, ESD-controlled handling and package-level protection. Its 290mW typical optical output is measured at IF = 350mA, 25°C, a 0.1ms pulse width and 10% duty cycle. The package should provide reliable backside cathode contact, access to the anode pad, suitable current delivery and optical alignment. Different current, pulse, temperature or thermal conditions require separate electrical and optical validation.
FAQ 2. When should I select the 940nm 300mW device instead of the 100mW or 800mW model?
The 300mW model is suitable when the project requires greater pulsed optical output and emitter count than the 100mW device. The 100mW options may be more appropriate when a smaller die and lower test current are required. The 800mW model may be selected when substantially higher output is required and the package can support its higher forward voltage, different emitter structure and larger rectangular die. All models require application-specific package and optical validation.
FAQ 3. Can the 940nm 300mW VCSEL Bare Die be evaluated for sensing and machine-vision projects?
Yes. The device can support component-level evaluation for medium-power NIR illumination, active optical detection, machine-vision support and industrial optical sensing. Engineering evaluation should cover the QCW operating condition, optical output, beam divergence, package geometry, lens or diffuser position, detector response and working distance. The bare die is not a complete optical system and does not independently determine detection range, optical safety or finished-product performance. Custom packaging and optical integration can be discussed for qualified projects.