940nm 8W VCSEL Bare Die
940nm 8W high-power VCSEL bare die with 560 emitters and 9W typical output for pulsed NIR sources, ceramic packaging and OEM optical module projects.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 940 nm typ.; 930–950 nm
- Optical Output Power
- 8W min. / 9W typ. / 10W max.
- Emitter Configuration
- 560 Emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 910±10μm × 770±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 940nm 8W High-Power VCSEL Bare Die for NIR Packaging and Module Integration
The 940nm 8W High-Power VCSEL Bare Die is a multi-emitter, multi-mode VCSEL chip developed for high-current semiconductor packaging, ceramic-submount assembly and high-output pulsed near-infrared optical-module integration. The device contains 560 emitters and provides 8W minimum, 9W typical and 10W maximum optical output at IF = 3.5A under a QCW test condition at 25°C.
Its 910 ±10μm × 770 ±10μm die dimensions, 560-emitter array and 8W–10W pulsed output position this model for high-power NIR illumination, industrial optical-source development and custom high-output module integration.
This high-power 940nm VCSEL bare die is intended for:
- OSAT semiconductor assembly and test providers
- High-current VCSEL and laser-diode packaging companies
- Die-attach and multiple-wire-bonding engineering teams
- Ceramic-submount and chip-on-submount integrators
- High-power NIR optical-module manufacturers
- Thermal-management and package-development teams
- Machine-vision and active-illumination companies
- Industrial optical-source and inspection companies
- Lens, diffuser and beam-shaping companies
- Laser-component distributors and second-source development teams
As an unpackaged semiconductor die, this product requires suitable die attachment, multiple wire bonds, electrical driving, package protection, thermal management and optical integration. It is not supplied as a finished SMD device, COB source, packaged laser or complete optical module.
Contact 1ONELASER to discuss 940nm 8W VCSEL bare-die supply and packaging requirements.
2. Optical Configuration and Packaging Direction
The 940nm 8W High-Power VCSEL Bare Die uses a 560-emitter array for high-output pulsed near-infrared source development. Its electrical, optical and mechanical parameters must be evaluated under the stated QCW condition, drive current, pulse width, duty cycle and temperature.
| Parameter | Value |
|---|---|
| Optical Output Power | 8W min. / 9W typ. / 10W max. at IF = 3.5A |
| Center Wavelength | 940nm typ. |
| Specified Wavelength Range | 930nm min. / 940nm typ. / 950nm max. |
| Operating Condition | QCW, 0.1ms pulse width, 6% duty cycle, 25°C |
| Emitter Configuration | 560 emitters |
| Forward Voltage | 4.75V min. / 4.9V typ. / 5.1V max. at IF = 3.5A |
| Threshold Current | 300mA min. / 380mA typ. / 550mA max. |
| Differential Resistance | 0.17Ω typ. |
| Slope Efficiency | 2.8W/A min. / 2.9W/A typ. / 3.2W/A max. |
| Power Conversion Efficiency | 50% min. / 53% typ. / 56% max. at IF = 3.5A |
| Beam Divergence | 25° min. / 28° typ. / 30° max. at 1/e² |
| Emitting Aperture | 10 ±1μm |
| Die Size | 910 ±10μm × 770 ±10μm |
| Die Thickness | 100 ±10μm |
| Anode Pad Structure | Two pads, each 870 ±0μm × 100 ±2μm |
| Backside Cathode Area | 910 ±10μm × 770 ±10μm |
The device can be evaluated for conductive die attachment, multiple gold wire bonds, high-current ceramic-submount assembly, chip-on-submount integration and application-specific laser packages. Package design should account for the large die area, dual-anode pad structure, backside cathode, die-attach material, bond-wire current capacity, thermal path and optical alignment.
The stated 9W typical value is a component-level test result under the specified QCW condition. It should not be interpreted as a continuous-wave output rating. Final optical output, wavelength, package temperature and reliability depend on the completed package, driver, pulse condition, die attachment, thermal path, optics and module architecture.
View the complete 940nm VCSEL Bare Die Series.
3. Packaging, Optical Module and Application Development
OSAT and Custom High-Power VCSEL Packaging
The 940nm 8W High-Power VCSEL Bare Die supports large-area die attachment, multiple gold wire bonds, ceramic-submount assembly and custom semiconductor-laser package development. Applicable packaging directions include:
- Large-area VCSEL die attachment and bond-line evaluation
- Multiple gold wire-bonding process development
- High-current ceramic-submount assembly
- Chip-on-submount high-power optical sources
- Application-specific laser packages
- Custom VCSEL array packaging
- Pulsed high-power NIR source development
- High-power NIR optical modules
The 560-emitter array, 3.5A test current, 4.9V typical forward voltage and 8W–10W pulsed output require suitable current delivery, dual-anode bonding, package protection and a controlled thermal path. Die-attach material, wire-bond configuration, ceramic substrate and package-to-heatsink interface must be validated under the stated pulse condition.
Lens and Optical Module Integration
The device can support optical companies and module-development teams working on integrated high-output 940nm near-infrared sources using:
- Collimation-lens assemblies
- Diffuser-integrated high-power NIR sources
- Beam-shaping and homogenization components
- Lens-integrated ceramic packages
- High-output pulsed illumination modules
- Machine-vision auxiliary sources
- Application-specific high-power optical assemblies
Optical integration should be validated using the actual far-field distribution, 28° typical beam divergence, emitting aperture, emitter-array dimensions, package position, lens spacing, diffuser characteristics and complete module architecture. A typical divergence value alone does not define the final spot size, irradiance distribution or usable optical field.
Downstream Application Development
The 940nm 8W High-Power VCSEL Bare Die can support component-level development and engineering evaluation for:
- High-power pulsed near-infrared illumination
- Active optical detection
- Machine-vision support illumination
- Industrial optical-source assemblies
- Industrial inspection systems
- Camera-related NIR source development
- High-current package and thermal evaluation
- Engineering and research optical sources
- Custom high-power VCSEL modules
These are downstream development directions after the bare die has been integrated into a suitable electrical, thermal, mechanical and optical system. The VCSEL bare die is not a finished sensing or illumination device and does not independently establish system performance, laser-safety classification or regulatory approval.
The finished-device developer must independently validate the driver condition, optical output, package temperature, beam distribution, working distance, laser classification, electrical safety and complete-system requirements.
Explore component-level VCSEL development for High-Power NIR & Optical Modules.
4. Evaluation Kit and Documentation Support
The 940nm 8W High-Power VCSEL Bare Die can be evaluated for large-area die-attach trials, multiple-wire-bonding verification, ceramic-submount development, high-current pulsed driver testing, thermal-path evaluation and initial high-power optical-module integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 940nm 8W High-Power VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Emitter configuration and chip layout
- High-current QCW driver and pulse requirements
- Die attachment, multiple-wire bonding and ceramic-submount design
- Thermal path, heatsink and package configuration
- Lens, diffuser and optical-module integration
- Volume-supply requirements
Request a 940nm 8W VCSEL Bare Die Evaluation Kit.
Submit a Custom Development & ODM request.
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
5. Frequently Asked Questions
FAQ 1. What packaging and operating conditions are required for the 940nm 8W VCSEL Bare Die?
The device is supplied as an unpackaged semiconductor die and requires conductive die attachment, multiple top-side wire bonds, ESD-controlled handling, package-level protection and a suitable thermal path. Its 9W typical optical output is measured at IF = 3.5A, 25°C, a 0.1ms pulse width and 6% duty cycle. The package should provide reliable backside cathode contact, balanced access to both anode pads, sufficient bond-wire current capacity and optical alignment. Different operating conditions require separate electrical, optical and thermal validation.
FAQ 2. When should I select the 940nm 8W device instead of the 1.5W model?
The 8W model is intended for projects requiring substantially higher pulsed output and capable of supporting its 560-emitter array, 3.5A test current, 4.9V typical forward voltage, dual-anode structure and more demanding thermal package. The 1.5W device may be more suitable when lower drive current, lower thermal load or reduced optical output is required. Selection should be based on the required pulsed output, available driver voltage and current, package dimensions, bond-wire structure and heatsink capability.
FAQ 3. Can the 940nm 8W VCSEL Bare Die be evaluated for high-power illumination and optical modules?
Yes. The device can support component-level evaluation for high-power pulsed NIR illumination, active optical detection, machine-vision support and custom high-power optical modules. Engineering evaluation should cover the stated QCW condition, optical output, beam divergence, die-attach quality, dual-anode current distribution, package geometry, heatsink interface, lens or diffuser position and thermal behavior. The bare die is not a complete optical system and does not independently determine irradiance distribution, optical safety or finished-product performance.