850nm
850nm 6W VCSEL Bare Die
850nm 6W VCSEL bare die with 5.5W typical QCW output, 1273 emitters and 19° beam divergence for NIR illumination, ceramic assembly and custom packaging.
Specifications
- Product Type
- Multi-Mode VCSEL Bare Die
- Wavelength
- 850nm typ.; 840–860nm
- Optical Output Power
- 5W min. / 5.5W typ. / 6W max.
- Emitter Configuration
- 1273 emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 1340 ±10μm × 1500 ±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 850nm 6W VCSEL Bare Die for High-Power NIR Source Development
The 850nm 6W VCSEL Bare Die is a high-power multi-emitter near-infrared VCSEL chip designed for machine vision, active NIR illumination, industrial optical detection and custom high-power optical-source development.
At a forward current of 7A, a temperature of 25°C, a pulse width of 0.1ms and a 3% duty cycle, the device provides 5W minimum, 5.5W typical and 6W maximum optical output power.
The device provides a typical peak wavelength of 850nm within a wavelength range of 840–860nm. Its 1273-emitter array structure and 1340 × 1500μm-class die footprint provide a compact high-output source for projects requiring substantial pulsed NIR illumination.
The far-field output has an annular, symmetrical beam profile. Final beam distribution in the completed optical system will also depend on package structure, die mounting, external optics, working distance and optical alignment.
The product is supplied as an unpackaged semiconductor bare die. It requires suitable die attachment, wire bonding, ceramic-submount integration, package-level protection, thermal-path design and optical integration before use in a finished product or module.
Development directions include:
- High-power near-infrared illumination
- Machine-vision support lighting
- Active optical detection
- Industrial optical sensing
- Distance and presence detection
- High-output pulsed NIR sources
- Ceramic-submount integration
- Chip-on-board optical assemblies
- Custom VCSEL packages
- Engineering and research optical sources
2. Optical and Electrical Characteristics
The principal optical and electrical characteristics of the 850nm 6W VCSEL Bare Die are shown below.
Parameter | Minimum | Typical | Maximum | Test Condition |
|---|---|---|---|---|
Peak Wavelength | 840nm | 850nm | 860nm | — |
Optical Output Power | 5W | 5.5W | 6W | IF = 7A, 25°C, QCW |
Threshold Current | — | 1.5A | 1.8A | — |
Forward Voltage | 2.0V | 2.2V | 2.4V | IF = 7A |
Beam Divergence, 1/e² | 18° | 19° | 23° | IF = 7A |
Slope Efficiency | 0.9W/A | 1.0W/A | — | — |
Differential Resistance | — | 0.1Ω | — | — |
Power Conversion Efficiency | 36% | 38% | — | IF = 7A |
The optical-output, electrical and beam-divergence values are specified under QCW conditions with a 0.1ms pulse width and 3% duty cycle at 25°C.
This product should not be interpreted as a continuous-wave device. The 5W, 5.5W and 6W values represent pulsed optical output under the specified QCW test condition.
Performance in the final package will also depend on drive-current accuracy, pulse width, duty cycle, die-attach quality, bonding resistance, thermal path, package structure and external optics.
Beam divergence is specified using the 1/e² definition and should not be directly replaced by an FWHM or D86 value.
The values above are representative parameters from the corresponding product specification. Final product selection and system integration should be confirmed using the complete datasheet.
3. Multi-Emitter Die Structure and Packaging Integration
The 850nm 6W VCSEL uses a large multi-emitter array structure for high-output pulsed NIR-source development.
The main mechanical characteristics include:
Mechanical Parameter | Specification |
|---|---|
Die Size | 1340 ±10μm × 1500 ±10μm |
Die Thickness | 150 ±10μm |
Number of Emitters | 1273 |
Emitting Aperture | 10 ±1μm |
Anode Pad Size | 1180 ±3μm × 105 ±3μm |
Backside Cathode Area | 1340 ±10μm × 1500 ±10μm |
The top-side anode-pad and backside-cathode configuration supports conductive die attachment and gold-wire bonding.
Possible packaging directions include:
- High-thermal-conductivity ceramic submounts
- Chip-on-board optical-source assemblies
- Custom ceramic laser packages
- High-power SMD package development
- Lens-integrated NIR sources
- Diffuser-integrated illumination modules
- Collimated optical-source assemblies
- Application-specific VCSEL modules
The package design should confirm die orientation, anode-pad position, wire-bond configuration, die-attach material, package dimensions, pulse-current path and thermal structure.
Although the product operates under a low duty cycle, the high pulse current and optical output require careful electrical and thermal design. Package-level current distribution, bonding resistance, submount conductivity and heat-spreading capability should be reviewed during engineering validation.
The device is ESD-sensitive. Appropriate electrostatic protection should be used during storage, handling, die placement, wire bonding, testing and package assembly.
4. Application Development
The 850nm 6W VCSEL Bare Die is primarily intended for pulsed near-infrared optical-source projects requiring high optical output, a multi-emitter array and flexible bare-die integration.
Application directions include:
- High-power NIR illumination
- Machine-vision illumination
- Active industrial detection
- Optical sensing
- Proximity and distance detection
- Security and monitoring illumination
- NIR camera-support lighting
- High-output optical modules
- Custom packaged VCSEL sources
- Engineering and research systems
Machine Vision and Active NIR Illumination
For machine-vision and active-illumination systems, product selection should consider working distance, illumination area, camera sensitivity, pulse synchronization, receiver response, external optics and required field of view.
The 6W-class pulsed output can support systems requiring stronger near-infrared illumination than lower-power VCSEL die options.
The final illumination distribution will depend on the VCSEL far-field profile, lens or diffuser design, working distance and mechanical alignment.
For application-level source selection and optical-system planning, visit the Sensing & Machine Vision solution page.
High-Power Packaging and Optical-Module Development
The bare-die format allows packaging companies and module developers to select the ceramic submount, die-attach material, bond-wire configuration, lens, diffuser and module architecture according to the final system.
The device can support high-current die-attach trials, wire-bonding validation, ceramic-submount development, beam-shaping integration and custom high-power VCSEL package projects.
Compared with the 850nm 3W VCSEL Bare Die, the 6W device provides higher pulsed optical output and uses a larger multi-emitter structure. The final choice should consider required output, package dimensions, current capability, pulse conditions and thermal design.
For high-power source, thermal and module-development directions, visit High-Power NIR & Optical Modules.
For wavelength, power, die-layout, package and optical-module requirements, submit a Custom Development & ODM request.
5. Evaluation Kit and Documentation Support
The 850nm 6W VCSEL Bare Die can be evaluated for die-attach trials, wire-bonding verification, ceramic-submount development, high-current driver evaluation, thermal-path validation and initial optical integration.
The Evaluation Kit includes:
- 10 pcs / KIT
- 850nm 6W VCSEL Bare Die
- Corresponding product datasheet
- Die-dimension and assembly documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength
- Wavelength tolerance
- Optical output power
- Power-bin selection
- QCW driving conditions
- Pulse width and duty cycle
- Die and bond-pad requirements
- Ceramic-submount integration
- Custom package development
- Lens, diffuser and beam-shaping integration
- Thermal-path requirements
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
6. Frequently Asked Questions
FAQ 1. What are the main specifications of the 850nm 6W VCSEL Bare Die?
The device provides a typical peak wavelength of 850nm within a wavelength range of 840–860nm.
At a forward current of 7A, a temperature of 25°C, a 0.1ms pulse width and 3% duty cycle, it provides 5W minimum, 5.5W typical and 6W maximum optical output power.
The typical threshold current is 1.5A, the typical forward voltage is 2.2V and the typical beam divergence is 19° using the 1/e² definition.
The device uses a 1273-emitter array structure with a die size of 1340 ±10μm × 1500 ±10μm.
FAQ 2. How should the 850nm 6W VCSEL Bare Die be packaged and thermally managed?
The device is supplied as an unpackaged semiconductor die and requires conductive die attachment, wire bonding, package-level protection and a suitable thermal path.
A high-thermal-conductivity ceramic submount or equivalent package structure should be evaluated according to the customer’s pulse-current, mechanical and thermal requirements.
The package should confirm die orientation, bond-pad position, die-attach material, wire-bond configuration, electrical resistance, current distribution and heat-spreading structure.
Appropriate ESD protection must be used throughout storage, handling, assembly and testing.
FAQ 3. When should I select the 6W device instead of the 3W or 2W CW VCSEL bare die?
The 6W device is intended for projects requiring higher pulsed optical output under QCW operation.
The 3W device may be suitable when lower pulse output, lower drive current or a smaller high-power optical source is sufficient.
The 2W CW device is intended for continuous-wave operation and should not be compared directly with the 6W QCW output rating.
The final model should be selected according to required optical output, CW or QCW operation, pulse width, duty cycle, drive-current capability, die size, package space, thermal path and system optical efficiency.