850nm
850nm 3W VCSEL Bare Die
850nm 3W VCSEL bare die with 3.5W typical QCW output, 624 emitters and 21° beam divergence for NIR illumination, ceramic assembly and custom packaging.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 850nm typ.; 840–860nm
- Optical Output Power
- 3.0W min. / 3.5W typ.
- Emitter Configuration
- 624 emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 1075 ±10μm × 1120 ±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 850nm 3W VCSEL Bare Die for High-Power NIR Development
The 850nm 3W VCSEL Bare Die is a high-power multi-emitter near-infrared VCSEL chip designed for active illumination, machine vision, industrial optical detection and custom optical-module development.
At a forward current of 4A, a temperature of 25°C, a pulse width of 0.5ms and a 1% duty cycle, the device provides 3.0W minimum and 3.5W typical optical output power.
The device provides a typical peak wavelength of 850nm within a wavelength range of 840–860nm.
Its 624-emitter array and 1075 × 1120μm-class die structure provide a compact pulsed NIR source for projects requiring substantially higher output than medium-power VCSEL dies.
The product is supplied as an unpackaged semiconductor die and requires suitable die attachment, wire bonding, ceramic-submount integration, package protection, thermal-path design and external optical integration.
Development directions include:
- High-power NIR illumination
- Machine-vision support lighting
- Active optical detection
- Industrial sensing
- Proximity and distance detection
- Custom ceramic packaging
- Chip-on-board optical assemblies
- Lens and diffuser integration
- Engineering and research optical sources
2. Optical and Electrical Characteristics
Parameter | Minimum | Typical | Maximum | Test Condition |
|---|---|---|---|---|
Peak Wavelength | 840nm | 850nm | 860nm | — |
Optical Output Power | 3.0W | 3.5W | — | IF = 4A, 25°C, QCW |
Threshold Current | — | 680mA | 800mA | — |
Forward Voltage | 2.1V | 2.3V | 2.5V | IF = 4A |
Beam Divergence, 1/e² | 17° | 21° | 23° | IF = 4A |
Slope Efficiency | 0.9W/A | 1.0W/A | — | — |
Differential Resistance | — | 0.2Ω | — | — |
Power Conversion Efficiency | 35% | 37% | — | IF = 4A |
The optical-output and beam-divergence values are specified under QCW conditions with a 0.5ms pulse width and 1% duty cycle at 25°C.
This product should not be interpreted as a continuous-wave device.
Performance in the final package will depend on pulse-current accuracy, duty cycle, die-attach quality, wire-bond resistance, submount conductivity, thermal structure and external optics.
Beam divergence is specified using the 1/e² definition and should not be replaced by an FWHM or D86 value.
3. Multi-Emitter Die Structure and Packaging
Mechanical Parameter | Specification |
|---|---|
Die Size | 1075 ±10μm × 1120 ±10μm |
Die Thickness | 150 ±10μm |
Number of Emitters | 624 |
Anode Pads | Two pads, approximately 100 × 1060μm each |
Backside Cathode | Full die area |
Possible packaging directions include:
- High-thermal-conductivity ceramic submounts
- Custom ceramic laser packages
- Chip-on-board optical assemblies
- High-power SMD package development
- Lens-integrated NIR sources
- Diffuser-integrated illumination modules
- Application-specific optical modules
The two elongated anode pads support multi-wire bonding and high-current electrical connection.
The package design should confirm wire quantity, wire diameter, current distribution, bonding resistance, die-attach material, submount conductivity and package-level thermal structure.
The device is ESD-sensitive and requires suitable protection during storage, die placement, bonding, testing and package assembly.
4. Application Development
Application directions include:
- Machine-vision illumination
- Active NIR illumination
- Industrial optical detection
- Proximity and distance sensing
- Security and monitoring illumination
- NIR camera-support lighting
- Custom packaged VCSEL sources
- Engineering and research systems
Machine Vision and Active Illumination
The 3W QCW output can support active illumination systems requiring greater output than low- and medium-power VCSEL dies.
System development should consider working distance, illuminated area, detector sensitivity, pulse synchronization, beam divergence, external optics and required field of view.
Comparison with 6W and 2W CW Devices
The 850nm 2W CW VCSEL Bare Die is intended for continuous-wave operation and should not be compared directly using optical-power value alone.
The final product should be selected according to operating mode, target output, pulse conditions, package dimensions, current capability and thermal design.
5. Evaluation Kit and Documentation Support
The Evaluation Kit includes:
- 10 pcs / KIT
- 850nm 3W VCSEL Bare Die
- Corresponding product datasheet
- Die-dimension and assembly documentation
- International shipping quoted according to destination
The device can be evaluated for die attachment, wire bonding, ceramic-submount development, driver testing, thermal validation and optical integration.
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
6. Frequently Asked Questions
FAQ 1. What are the main specifications of the 850nm 3W VCSEL Bare Die?
The device provides 3.0W minimum and 3.5W typical optical output at 4A under a 0.5ms pulse width and 1% duty cycle.
It uses a 624-emitter structure with a typical 850nm wavelength and 21° typical 1/e² beam divergence.
FAQ 2. Is the 850nm 3W VCSEL Bare Die a CW product?
No.
The device is specified for QCW or pulse operation. Its 3W-class output should not be interpreted as continuous-wave output.
The final driver must follow the specified pulse width, duty cycle and current condition.
FAQ 3. How should the 3W VCSEL die be packaged?
The device requires conductive die attachment, multi-wire bonding, package protection and a suitable ceramic submount or equivalent thermal structure.
The package should be designed according to current distribution, bond-wire resistance, die dimensions, pulse condition and external optical requirements.