850nm
850nm 300mW VCSEL Bare Die
850nm 300mW VCSEL bare die with 320mW typical QCW output, 48 emitters and 20° beam divergence for sensing, machine vision and OEM optical modules.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 850nm typ.; 840–860nm
- Optical Output Power
- 300mW min. / 320mW typ. / 360mW max.
- Emitter Configuration
- 48 emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 330 ±10μm × 330 ±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 850nm 300mW VCSEL Bare Die for Sensing and NIR Illumination
The 850nm 300mW VCSEL Bare Die is a compact 48-emitter near-infrared VCSEL array designed for sensing, machine vision, industrial optical detection and custom optical-module development.
At a forward current of 350mA, a temperature of 25°C, a pulse width of 0.1ms and a 10% duty cycle, the device provides 300mW minimum, 320mW typical and 360mW maximum optical output power.
The device provides a typical peak wavelength of 850nm within a wavelength range of 840–860nm.
Its 48-emitter structure and 330 × 330μm-class square die footprint provide a compact medium-power optical source for package designs requiring greater output than low-power VCSEL dies.
The product is supplied as an unpackaged semiconductor die and requires die attachment, wire bonding, package protection, thermal-path design and optical integration.
Development directions include:
- Near-infrared sensing
- Machine-vision illumination
- Industrial optical detection
- Proximity and distance detection
- Compact active illumination
- Custom SMD and ceramic packaging
- TO-can package development
- Optical alignment and beam evaluation
- Engineering and research systems
2. Optical and Electrical Characteristics
Parameter | Minimum | Typical | Maximum | Test Condition |
|---|---|---|---|---|
Peak Wavelength | 840nm | 850nm | 860nm | — |
Optical Output Power | 300mW | 320mW | 360mW | IF = 350mA, 25°C, QCW |
Threshold Current | 45mA | 55mA | 65mA | — |
Forward Voltage | 1.9V | 2.1V | 2.3V | IF = 350mA |
Beam Divergence, 1/e² | 19° | 20° | 22° | IF = 350mA |
Slope Efficiency | 1.0W/A | 1.05W/A | 1.2W/A | — |
Differential Resistance | — | 1.5Ω | — | — |
Power Conversion Efficiency | 40% | 44% | 46% | IF = 350mA |
The optical-output and beam-divergence values are specified under QCW conditions with a 0.1ms pulse width and 10% duty cycle at 25°C.
The product should not be interpreted as a continuous-wave device.
Performance in the completed package will depend on driver accuracy, pulse condition, die attachment, wire bonding, package thermal structure and external optics.
Beam divergence is specified using the 1/e² definition.
3. Die Structure and Packaging Integration
Mechanical Parameter | Specification |
|---|---|
Die Size | 330 ±10μm × 330 ±10μm |
Die Thickness | 130 ±10μm |
Number of Emitters | 48 |
Emitting Aperture | 10 ±1μm |
Anode Pad | 98 ±3μm × 110 ±3μm |
Backside Cathode | Full die area |
The compact square structure supports conventional conductive die attachment and top-side gold-wire bonding.
Possible packaging directions include:
- Ceramic-submount assembly
- Custom SMD packages
- TO-can packages
- Chip-on-board optical sources
- Lens-integrated sensor sources
- Diffuser-integrated illumination modules
- Compact NIR optical modules
The package design should confirm die orientation, bond-pad access, die-attach material, wire-bonding process, thermal path and external optical alignment.
The device is ESD-sensitive and requires suitable protection throughout storage, handling, bonding and testing.
4. Application Development
Application directions include:
- Near-infrared sensing
- Proximity sensing
- Presence detection
- Machine-vision support illumination
- Industrial optical detection
- Consumer-electronics optical sources
- Compact active NIR illumination
- Engineering and research systems
Sensing and Machine Vision
The 300mW product provides a medium-power option between compact low-power VCSEL dies and high-power watt-class VCSEL arrays.
System development should consider working distance, detector sensitivity, pulse synchronization, illuminated area, external optics and required field of view.
Comparison with 100mW and 3W Products
The 850nm 3W VCSEL Bare Die provides substantially higher pulsed output for stronger illumination requirements.
The final product should be selected according to output, current capability, pulse condition, package space and optical-system efficiency.
5. Evaluation Kit and Documentation Support
The Evaluation Kit includes:
- 10 pcs / KIT
- 850nm 300mW VCSEL Bare Die
- Corresponding product datasheet
- Die-dimension and assembly documentation
- International shipping quoted according to destination
The device can be evaluated for die attachment, wire bonding, driver-circuit development, packaging and initial optical integration.
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available.
Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
6. Frequently Asked Questions
FAQ 1. What are the main specifications of the 850nm 300mW VCSEL Bare Die?
The device provides 300mW minimum, 320mW typical and 360mW maximum output at 350mA under a 0.1ms pulse width and 10% duty cycle.
It uses a 48-emitter structure and provides 20° typical beam divergence using the 1/e² definition.
FAQ 2. Is the 300mW VCSEL die suitable for CW operation?
No.
The device is specified for QCW or pulse operation and should be driven according to the stated pulse width and duty cycle.
It should not be operated as a 300mW continuous-wave source without separate validation.
FAQ 3. When should I choose the 300mW product?
The 300mW device is suitable when a project requires more output than low-power 5mW or 100mW dies but does not require a watt-class VCSEL array.
The final choice should consider working distance, detector sensitivity, package dimensions, pulse condition and required illumination level.