940nm
940nm 100mW VCSEL Bare Die
940nm 100mW VCSEL bare die with 10Mil and 13Mil options for pulsed NIR sensing, custom packaging, machine vision and compact OEM optical modules.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 940 nm typ.; 930–950 nm
- Optical Output Power
- 100mW min. / 115mW typ. (10Mil); 100mW min. / 120mW typ. (13Mil)
- Emitter Configuration
- 23 emitters (10Mil) / 21 emitters (13Mil)
- Operating Mode
- QCW / Pulse
- Die Size
- 245±10μm × 239±10μm / 300±10μm × 300±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 940nm 100mW VCSEL Bare Die with 10Mil and 13Mil Options for Pulsed NIR Packaging and Module Integration
The 940nm 100mW VCSEL Bare Die is available in 10Mil and 13Mil die versions for chip-level packaging, ceramic-submount assembly and pulsed near-infrared optical-module integration. Both versions are multi-emitter, multi-mode VCSEL chips characterized at IF = 140mA under a QCW test condition at 25°C.
The 10Mil version uses a compact 245 ±10μm × 239 ±10μm die with 23 emitters and provides 100mW minimum and 115mW typical optical output. The 13Mil version uses a larger 300 ±10μm × 300 ±10μm die with 21 emitters and provides 100mW minimum and 120mW typical optical output.
The two versions allow packaging and optical-source developers to select the die dimensions, emitter configuration, pad structure and typical optical output that better match the intended semiconductor package and module architecture.
These 940nm VCSEL bare-die options are intended for:
- OSAT semiconductor assembly and test providers
- VCSEL and laser-diode packaging companies
- Die-attach and gold wire-bonding engineering teams
- Ceramic-submount and chip-on-board integrators
- Compact NIR optical-module manufacturers
- Pulsed sensing-source developers
- Machine-vision and optical-detection companies
- Consumer-electronics optical-source developers
- Lens, diffuser and beam-shaping companies
- Laser-component distributors and second-source development teams
As unpackaged semiconductor dies, both versions require suitable die attachment, wire bonding, electrical driving, package protection and optical integration. They are not supplied as finished SMD devices, COB sources, packaged lasers or complete optical modules.
2. Optical Configuration and Packaging Direction
The 940nm 100mW VCSEL Bare Die is offered in two die configurations characterized at the same 140mA test current, 25°C, 0.5ms pulse width and 1% duty cycle. The versions differ mainly in die dimensions, emitter count, anode-pad structure, die thickness and typical optical output.
Parameter | 10Mil Version | 13Mil Version |
|---|---|---|
Optical Output Power | 100mW min. / 115mW typ. at IF = 140mA | 100mW min. / 120mW typ. at IF = 140mA |
Center Wavelength | 940nm typ. | 940nm typ. |
Specified Wavelength Range | 930nm min. / 940nm typ. / 950nm max. | 930nm min. / 940nm typ. / 950nm max. |
Operating Condition | QCW, 0.5ms pulse width, 1% duty cycle, 25°C | QCW, 0.5ms pulse width, 1% duty cycle, 25°C |
Emitter Configuration | 23 emitters | 21 emitters |
Forward Voltage | 1.8V min. / 2.0V typ. / 2.15V max. at IF = 140mA | 1.9V min. / 2.0V typ. / 2.15V max. at IF = 140mA |
Threshold Current | 22mA typ. / 28mA max. | 20mA typ. / 26mA max. |
Differential Resistance | 4Ω typ. | 5Ω typ. |
Slope Efficiency | 0.9W/A min. / 1.0W/A typ. | 0.9W/A min. / 1.0W/A typ. |
Power Conversion Efficiency | 39% min. / 41% typ. at IF = 140mA | 39% min. / 41% typ. at IF = 140mA |
Beam Divergence | 18° min. / 21° typ. / 24° max. at 1/e² | 18° min. / 21° typ. / 24° max. at 1/e² |
Die Size | 245 ±10μm × 239 ±10μm | 300 ±10μm × 300 ±10μm |
Die Thickness | 100 ±10μm | 130 ±10μm |
Anode Pad Size | 96 ±5μm × 100 ±5μm | 105 ±5μm |
Backside Cathode Area | 245 ±10μm × 239 ±10μm | 300 ±10μm × 300 ±10μm |
The 10Mil version provides a smaller die footprint and lower die thickness, making it suitable for package designs where semiconductor area and vertical package height are restricted. The 13Mil version provides a larger square die, a larger anode pad and slightly higher typical optical output.
Both versions support conductive die attachment, gold wire bonding, ceramic-submount assembly, chip-on-board integration and application-specific compact laser packages. Package design should account for the selected die dimensions, anode-pad geometry, backside cathode, attachment material, bonding process and optical alignment.
The stated 115mW and 120mW typical values are component-level test results under the specified QCW condition. They should not be interpreted as continuous-wave output ratings. Final optical output, wavelength, operating temperature and reliability depend on the completed package, driver, pulse condition, thermal path, optics and module architecture.
Related Articles
3. Packaging, Optical Module and Application Development
OSAT and Custom VCSEL Packaging
The 940nm 100mW VCSEL Bare Die supports die attachment, gold wire bonding, ceramic-submount assembly and custom semiconductor-laser package development. Applicable packaging directions include:
- VCSEL die attachment and bond-line evaluation
- Gold wire-bonding process development
- Ceramic-submount assembly
- Chip-on-board optical sources
- Custom SMD VCSEL packages
- TO-can laser packages
- Application-specific ceramic packages
- Compact pulsed NIR optical modules
The two die versions allow the packaging team to select between a smaller 245μm-class rectangular die and a larger 300μm square die. Die orientation, bond-pad access, backside electrical contact, ESD control, package protection and optical-axis position must be validated according to the selected version and intended assembly process.
Lens and Optical Module Integration
The device can support optical companies and module-development teams working on compact 940nm near-infrared sources using:
- Collimation-lens assemblies
- Diffuser-integrated optical sources
- Beam-shaping components
- Lens-integrated ceramic packages
- FOV-controlled NIR illumination sources
- Compact sensing-source modules
- Application-specific optical assemblies
Optical integration should be validated using the actual far-field distribution, 21° typical beam divergence, emitter arrangement, selected die geometry, package-window design, lens spacing, diffuser characteristics and complete module architecture. Beam divergence alone does not define the final spot size, irradiance distribution or usable optical field.
Downstream Application Development
The 940nm 100mW VCSEL Bare Die supports component-level development and engineering evaluation for:
- Pulsed near-infrared sensing
- Active optical detection
- Compact NIR illumination
- Machine-vision source evaluation
- Camera-related NIR source development
- Consumer-electronics optical sensing
- Industrial optical detection
- Engineering and research light sources
- Customer-specific packaged VCSEL products
These are downstream development directions after the selected bare die has been integrated into a suitable electrical, mechanical and optical system. The component does not independently establish detection distance, optical uniformity, eye-safety classification, finished-device performance or regulatory approval.
The finished-device developer must independently validate the driver condition, received optical signal, working distance, package temperature, beam distribution, laser classification, electrical safety and complete-system requirements.
4. Evaluation Kit and Documentation Support
The 940nm 100mW VCSEL Bare Die supports die-attach trials, wire-bonding verification, ceramic-submount development, QCW driver testing and initial compact optical-module integration.
The Evaluation Kit includes 10 pcs / KIT per selected model:
- Selected 10Mil or 13Mil 940nm 100mW VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
We offer project-specific support for the following requirements:
- 10Mil or 13Mil die selection
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Emitter configuration and die dimensions
- QCW driver and pulse requirements
- Die attachment, wire bonding and ceramic-submount design
- Custom SMD, TO-can or ceramic packaging
- Lens, diffuser and optical-module integration
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer's finished device.
5. Frequently Asked Questions
FAQ 1. What is the difference between the 10Mil and 13Mil 940nm 100mW VCSEL Bare Die versions?
The 10Mil version uses a 245 ±10μm × 239 ±10μm die with 23 emitters, 100 ±10μm die thickness and 115mW typical optical output. The 13Mil version uses a 300 ±10μm × 300 ±10μm die with 21 emitters, 130 ±10μm die thickness and 120mW typical output. Both versions are characterized at IF = 140mA under the same 25°C, 0.5ms pulse-width and 1% duty-cycle condition. Selection should be based on package space, pad geometry, assembly process and optical requirements.
FAQ 2. Which 940nm 100mW VCSEL Bare Die version should I select for my package?
The 10Mil version is more suitable when the package requires a smaller die footprint, lower die thickness or a compact rectangular layout. The 13Mil version may be preferred when the package can accommodate a larger square die, a larger anode pad and slightly higher typical optical output. The final decision should also consider die-attach equipment, wire-bonding access, submount metallization, package-window position and optical alignment. Both versions require package-level electrical, optical and assembly validation.
FAQ 3. Can both 940nm 100mW VCSEL Bare Die versions be evaluated for sensing and machine-vision projects?
Yes. Both versions support component-level evaluation for pulsed NIR sensing, active optical detection, consumer-electronics optical sources and compact machine-vision support. Engineering evaluation should cover the QCW operating condition, optical output, beam divergence, die geometry, package design, lens or diffuser position, detector response and working distance. The bare dies are not complete sensing systems and do not independently determine detection range, optical safety or finished-product performance. 1ONELASER offers custom packaging and optical integration for qualified projects.
