1064nm
1064nm 20mW VCSEL Bare Die
1064nm 20mW VCSEL bare die with four emitters and 20mW typical QCW output at 25mA, 25°C, 0.5ms pulses and 1% duty for compact NIR package integration.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 1064 nm typ.
- Optical Output Power
- 9mW min. / 20mW typ.
- Emitter Configuration
- 4 Emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 170±10μm × 170±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 1064nm 20mW VCSEL Bare Die for Packaging and Module Integration
The 1064nm 20mW VCSEL Bare Die is an unpackaged four-emitter VCSEL chip for die-level packaging, ceramic-submount assembly and compact near-infrared optical-source integration.
At IF = 25mA and 25°C under QCW operation with a 0.5ms pulse width and 1% duty cycle, the device provides 9mW minimum and 20mW typical optical output power. The wavelength specification is 1060nm minimum and 1064nm typical.
The 170 ± 10μm × 170 ± 10μm square die contains four emitters, an 87 ± 3μm × 85 ± 3μm top anode pad and a backside cathode covering the die footprint. These mechanical details distinguish it from the rectangular six-emitter 30mW option and should be considered before package drawings or assembly tooling are finalized.
This component can be evaluated by:
- OSAT semiconductor assembly and test providers
- VCSEL and laser-diode packaging companies
- Die-attach and wire-bonding engineering teams
- Ceramic-submount and chip-on-submount integrators
- Sensor light-source developers
- Machine-vision optical-source developers
- Consumer-electronics optical-source teams
- Industrial optical-source and module developers
- Laser-component distributors and second-source engineering teams
As a bare semiconductor die, the product requires appropriate die attachment, wire bonding, ESD-controlled handling, electrical driving, package protection and optical integration. It is not supplied as a finished packaged laser, optical module or sensing system.
2. Optical Configuration and Packaging Direction
The 1064nm 20mW VCSEL Bare Die combines a four-emitter layout with a square die footprint for compact pulse-driven optical-source packaging. Electrical, optical and mechanical decisions should be based on the published test condition and the exact die geometry.
Parameter | Value | Test Condition or Note |
|---|---|---|
Optical Output Power | 9mW min. / 20mW typ. | IF = 25mA |
Wavelength | 1060nm min. / 1064nm typ. | No maximum value is specified |
Operating Condition | QCW / Pulse | 25°C, 0.5ms pulse width, 1% duty cycle |
Emitter Configuration | 4 emitters | Four-emitter die layout |
Threshold Current | 3.0mA typ. | — |
Forward Voltage | 2.0V typ. | IF = 25mA |
Slope Efficiency | 0.8W/A min. / 0.9W/A typ. | — |
Power Conversion Efficiency | 41% typ. | IF = 25mA |
Beam Divergence | 21° typ. | 1/e² definition, IF = 25mA |
Die Size | 170 ± 10μm × 170 ± 10μm | Square footprint |
Die Thickness | 130 ± 10μm | — |
Top Anode Pad | 87 ± 3μm × 85 ± 3μm | Top-side wire-bond access |
Backside Cathode | 170 ± 10μm × 170 ± 10μm | Covers the die footprint |
The 20mW value is a typical component-level result at the stated QCW test point. It is not a continuous-wave output rating and should not be carried over to a different current, pulse width, duty cycle or temperature without separate validation.
The square die format can simplify orientation decisions where a nearly equal X/Y footprint is preferred, but the actual die-attach material, bond-line process, wire-bond loop, package protection and optical-axis tolerance remain package-development choices. The datasheet does not define a complete production assembly process.
Within the 20mW and 30mW pair, this product uses the lower published test current and the smaller top-anode-pad area. Selection should therefore consider the driver, bond-pad access and required optical output together rather than power alone.
3. Packaging, Optical Module and Application Development
OSAT and Custom Laser Packaging
The square four-emitter die supports component-level packaging work in which a packaging company or optical-module developer defines the submount, electrical contacts and protective structure around the chip.
Relevant engineering work can include:
- Conductive die-attach process evaluation
- Top-side wire-bonding trials using the 87 ± 3μm × 85 ± 3μm anode pad
- Backside-cathode contact development
- Ceramic-submount and chip-on-submount assembly
- Package-orientation and optical-axis control
- ESD-controlled storage, handling, bonding and test procedures
- Customer-specific laser-package development
The published 25mA test point does not replace package-level electrical and thermal validation. Contact resistance, die-attach quality, wire-bond integrity, pulse-driver behavior and package temperature should be checked under the intended operating sequence.
Lens and Optical Module Integration
The datasheet identifies sensor light sources, consumer electronic products, machine vision and industrial use as application directions. For these component-level projects, the packaged source can be evaluated with:
- Collimation-lens assemblies
- Diffuser or beam-shaping components
- Lens-integrated ceramic submounts
- Sensor light-source modules
- Machine-vision optical-source assemblies
- Consumer-electronics and industrial optical-source modules
The specified 21° typical beam divergence uses the 1/e² definition at IF = 25mA. Final spot size and optical field also depend on die position, package-window geometry, lens spacing, diffuser characteristics and complete optical alignment.
Downstream Application Development
The 1064nm 20mW VCSEL Bare Die can support engineering evaluation for sensor light sources, machine-vision optical sources, consumer-electronics optical assemblies, industrial optical sources and research prototypes after it has been integrated into a suitable package.
The component does not independently establish working distance, received signal, optical uniformity, eye-safety classification, finished-device performance or regulatory approval. The finished-system developer must validate the driver, package, optics, receiver where applicable, environmental conditions and complete safety requirements.
4. Evaluation Kit and Documentation Support
The 1064nm 20mW VCSEL Bare Die can be evaluated for square-die placement, die-attach trials, top-side wire bonding, QCW driver testing, ceramic-submount development and initial optical alignment.
The Evaluation Kit includes:
- 10 pcs / KIT
- 1064nm 20mW VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following project requirements can be discussed:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Four-emitter chip layout
- QCW current, pulse width and duty-cycle requirements
- Square-die placement and anode-pad access
- Die attachment, wire bonding and ceramic-submount design
- External lens and optical-module integration
- Evaluation quantity and volume-supply planning
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer’s finished device.
5. Frequently Asked Questions
FAQ 1. What QCW test condition defines the 20mW typical output of the 1064nm four-emitter VCSEL bare die?
The published optical-output value is 9mW minimum and 20mW typical at IF = 25mA and 25°C under QCW operation with a 0.5ms pulse width and 1% duty cycle. These values describe the stated component test point and should not be treated as guaranteed output under another current, pulse width, duty cycle, package temperature or thermal design.
FAQ 2. How should the 170μm square 1064nm 20mW VCSEL die be considered for die attach and wire bonding?
The die measures 170 ± 10μm × 170 ± 10μm and is 130 ± 10μm thick. It uses an 87 ± 3μm × 85 ± 3μm top anode pad and a backside cathode covering the die footprint. Package development should confirm die orientation, attachment material, bond-pad access, wire-bond parameters, package protection and ESD controls before production tooling is finalized.
FAQ 3. When should I select the 1064nm 20mW four-emitter VCSEL bare die instead of the 30mW or 3W model?
The 20mW option is the lower-output member of the compact mW-level pair and is characterized at 25mA using four emitters on a square die. The 1064nm 30mW VCSEL Bare Die provides 30mW typical output at 35mA using six emitters on a rectangular die. The 1064nm 3W VCSEL Bare Die belongs to a separate watt-level source class. Final selection should consider optical output, test current, die geometry, bond-pad access, package space and the complete electrical and optical design.